transient thermal resistance pulse width 0.1ms 20 60 100 140 180 1ms 10ms 100ms 10s 100s 1s 160 120 80 40 0 d=1(d.c) d=0.2 d=0.1 d=0.05 d=0.5 t1 tp d=t1 tp single pulse derating curve t -temperature (c) m a x p ower d i ssi p ati on - (wa tt s) -40 0.50 0.25 1.0 0.75 0 40 80 120 200 16 0 a mbi e nt tempe ratu re spice parameters *zetex ZTX1049A spice model last revision 15/6/95 * .model ZTX1049A npn is=1.5e-12 nf=1.0 bf=600 ikf=7.5 vaf=100 + ise=0.9e-13 ne=1.25 nr=1.0 br=150 ikr=3 var=15 + isc=5.0e-13 nc=1.76 rb=0.1 re=0.018 rc=0.007 + cjc=136e-12 cje=550e-12 mjc=0.352 mje=0.36 + vjc=0.554 vje=0.726 tf=400e-12 tr=6.9e-9 * * * ? 1995 zetex plc the copyright in this model and the design embodied belong to zetex plc (?zetex?). it is supplied free of charge by zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. all other rights are reserved. the model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by zetex plc, its distributors or agents. ZTX1049A npn silicon planar medium power high gain transistor issue 1 ? june 1995 features *v cev = 80v * very low saturation voltages *high gain * 20 amps pulse current applications * lcd backlight converters * emergency lighting * dc-dc converters absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5v peak pulse current i cm 20 a continuous collector current i c 4a base current i b 500 ma power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c c b e e-line to92 compatible ZTX1049A zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? zetex plc 1997 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 internet: fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service.
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 80 120 v i c =100 m a collector-emitter breakdown voltage v ces 80 120 v ic=100 m a collector-emitter breakdown voltage v ceo 25 35 v ic=10ma collector-emitter breakdown voltage v cev 80 120 v ic=100 m a, v eb =1v emitter-base breakdown voltage v (br)ebo 5 8.75 v i e =100 m a collector cut-off current i cbo 0.3 10 na v cb =50v emitter cut-off current i ebo 0.3 10 na v eb =4v collector emitter cut-off current i ces 0.3 10 na vces=50v collector-emitter saturation voltage v ce(sat) 30 60 125 155 45 80 180 220 mv mv mv mv i c =0.5a, i b =10ma* i c =1a, i b =10ma* i c =2a, i b =10ma* i c =4a, i b =50ma* base-emitter saturation voltage v be(sat) 890 950 mv i c =4a, i b =50ma* base-emitter turn-on voltage v be(on) 820 900 mv ic=4a, v ce =2v* static forward current transfer ratio h fe 250 300 300 200 35 430 450 450 350 70 1200 i c =10ma, v ce =2v* i c =0.5a, v ce =2v* i c =1a, v ce =2v* i c =4a, v ce =2v* i c =20a, v ce =2v* transition frequency f t 180 mhz i c =50ma, v ce =10v f=50mhz output capacitance c obo 45 60 pf v cb =10v, f=1mhz turn - on time t on 125 ns i c =4a, i b =40ma, v cc =10v turn -off time t off 380 ns i c =4a, i b = 40ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZTX1049A 100a 10a 1a 10ma 100ma 1ma v ce (sat) v ic i c -collector current i c -collector current v be (sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.2 1.0 1.4 100a 10a 1a h fe v ic i c -collector current 1ma 100ma 10ma 100a 10a 1a 100 0 200 400 300 500 600 700 10ma 1ma i c -collector current v be (on) v i c 100ma 1a 10a 100a 0.6 0.8 1.0 1.2 1.4 0.4 0.2 0 ic-collector current v ce (sat) v i c 1ma 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 i c /i b =100 i c /i b =200 i c /i b =50 i c /i b =10 100a 10a 1a 0 1.0 0.6 0.2 0.4 0.8 100 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1 0.1v 10v 100v 1s dc 100ms 10ms 1ms singe pulse test t amb = 25c 1v +25c -55c +25c +100c +175c i c /i b =100 v ce =2v +100c -55c +25c i c /i b =100 -55c +25c +100c +175c -55c +25c +100c +175c v ce =2v 100 m s ZTX1049A typical characteristics
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 80 120 v i c =100 m a collector-emitter breakdown voltage v ces 80 120 v ic=100 m a collector-emitter breakdown voltage v ceo 25 35 v ic=10ma collector-emitter breakdown voltage v cev 80 120 v ic=100 m a, v eb =1v emitter-base breakdown voltage v (br)ebo 5 8.75 v i e =100 m a collector cut-off current i cbo 0.3 10 na v cb =50v emitter cut-off current i ebo 0.3 10 na v eb =4v collector emitter cut-off current i ces 0.3 10 na vces=50v collector-emitter saturation voltage v ce(sat) 30 60 125 155 45 80 180 220 mv mv mv mv i c =0.5a, i b =10ma* i c =1a, i b =10ma* i c =2a, i b =10ma* i c =4a, i b =50ma* base-emitter saturation voltage v be(sat) 890 950 mv i c =4a, i b =50ma* base-emitter turn-on voltage v be(on) 820 900 mv ic=4a, v ce =2v* static forward current transfer ratio h fe 250 300 300 200 35 430 450 450 350 70 1200 i c =10ma, v ce =2v* i c =0.5a, v ce =2v* i c =1a, v ce =2v* i c =4a, v ce =2v* i c =20a, v ce =2v* transition frequency f t 180 mhz i c =50ma, v ce =10v f=50mhz output capacitance c obo 45 60 pf v cb =10v, f=1mhz turn - on time t on 125 ns i c =4a, i b =40ma, v cc =10v turn -off time t off 380 ns i c =4a, i b = 40ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZTX1049A 100a 10a 1a 10ma 100ma 1ma v ce (sat) v ic i c -collector current i c -collector current v be (sat) v i c 0 0.2 100ma 10ma 0.4 0.6 0.8 1.2 1.0 1.4 100a 10a 1a h fe v ic i c -collector current 1ma 100ma 10ma 100a 10a 1a 100 0 200 400 300 500 600 700 10ma 1ma i c -collector current v be (on) v i c 100ma 1a 10a 100a 0.6 0.8 1.0 1.2 1.4 0.4 0.2 0 ic-collector current v ce (sat) v i c 1ma 0 0.2 100ma 10ma 0.4 0.6 0.8 1.0 i c /i b =100 i c /i b =200 i c /i b =50 i c /i b =10 100a 10a 1a 0 1.0 0.6 0.2 0.4 0.8 100 10 1 0.1 safe operating area v ce - collector emitter voltage (v) 0.1 0.1v 10v 100v 1s dc 100ms 10ms 1ms singe pulse test t amb = 25c 1v +25c -55c +25c +100c +175c i c /i b =100 v ce =2v +100c -55c +25c i c /i b =100 -55c +25c +100c +175c -55c +25c +100c +175c v ce =2v 100 m s ZTX1049A typical characteristics
transient thermal resistance pulse width 0.1ms 20 60 100 140 180 1ms 10ms 100ms 10s 100s 1s 160 120 80 40 0 d=1(d.c) d=0.2 d=0.1 d=0.05 d=0.5 t1 tp d=t1 tp single pulse derating curve t -temperature (c) m a x p ower d i ssi p ati on - (wa tt s) -40 0.50 0.25 1.0 0.75 0 40 80 120 200 16 0 a mbi e nt tempe ratu re spice parameters *zetex ZTX1049A spice model last revision 15/6/95 * .model ZTX1049A npn is=1.5e-12 nf=1.0 bf=600 ikf=7.5 vaf=100 + ise=0.9e-13 ne=1.25 nr=1.0 br=150 ikr=3 var=15 + isc=5.0e-13 nc=1.76 rb=0.1 re=0.018 rc=0.007 + cjc=136e-12 cje=550e-12 mjc=0.352 mje=0.36 + vjc=0.554 vje=0.726 tf=400e-12 tr=6.9e-9 * * * ? 1995 zetex plc the copyright in this model and the design embodied belong to zetex plc (?zetex?). it is supplied free of charge by zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. all other rights are reserved. the model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by zetex plc, its distributors or agents. ZTX1049A npn silicon planar medium power high gain transistor issue 1 ? june 1995 features *v cev = 80v * very low saturation voltages *high gain * 20 amps pulse current applications * lcd backlight converters * emergency lighting * dc-dc converters absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5v peak pulse current i cm 20 a continuous collector current i c 4a base current i b 500 ma power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c c b e e-line to92 compatible ZTX1049A zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? zetex plc 1997 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 internet: fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service.
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